IndiumV3, Main, Repository, bibRecord, 000860

Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

Identifieur interne : 000860 ( Main/Repository ); précédent : 000859; suivant : 000861

Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

Auteurs : RBID : Pascal:13-0328129

Descripteurs français

Pascal (Inist)
- Couche ITO, Capteur mesure, Dispositif photoconducteur, Addition étain, Dépôt projection, Température substrat, Photosensibilité, Thiourée, Diffraction RX, Cristallinité, Caractéristique optique, Propriété optique, Coefficient absorption, Facteur transmission, Conductivité électrique, Résistance électrique, Résistivité électrique, Dépendance du temps, Obscurité, Eclairement, Spectre visible, Nanocristal, Couche mince transparente, Oxyde d'indium, Verre, Soufre, Additif, Matériau dopé, 0707D, 8105K, 7867, 7363, ITO, 7840R, Pyrolyse par projection.
Wicri :
- concept : Verre, Soufre.

English descriptors

KwdEn :
- Absorption coefficient, Additive, Crystallinity, Darkness, Doped materials, Electric resistivity, Electrical conductivity, Glass, ITO layers, Illumination, Indium oxide, Measurement sensor, Nanocrystal, Optical characteristic, Optical properties, Photoconducting device, Photosensitivity, Resistor, Spray coating, Spray pyrolysis, Substrat temperature, Sulfur, Thiourea, Time dependence, Tin addition, Transmittance, Transparent thin film, Visible spectrum, X ray diffraction.

Abstract

Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH₂)₂ was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn₂S₃ appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300-1,000 nm. As a result, ITO and ITO-Sn₂S₃ thin films were prepared with resistivity of 3.06-3.7 × 10^-4 Ω cm and a transmittance of 88-91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn₂S₃ films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn₂S₃ film with [S]/ [In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000649

Links to Exploration step

Pascal:13-0328129

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nanocrystalline ITO-Sn<sub>2</sub>
S<sub>3</sub>
 transparent thin films for photoconductive sensor applications</title>
<author><name sortKey="Motevalizadeh, L" uniqKey="Motevalizadeh L">L. Motevalizadeh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Mashhad Branch, Islamic Azad University</s1>
<s2>Mashhad</s2>
<s3>IRN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Mashhad</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Khorshidifar, M" uniqKey="Khorshidifar M">M. Khorshidifar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Mashhad Branch, Islamic Azad University</s1>
<s2>Mashhad</s2>
<s3>IRN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Mashhad</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ebrahimizadeh Abrishami, M" uniqKey="Ebrahimizadeh Abrishami M">M. Ebrahimizadeh Abrishami</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Materials and Electroceramics Laboratory, Department of Physics, Ferdowsi University of Mashhad</s1>
<s2>Mashhad</s2>
<s3>IRN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Mashhad</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bagheri Mohagheghi, M M" uniqKey="Bagheri Mohagheghi M">M. M. Bagheri Mohagheghi</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Damghan University</s1>
<s2>Damghan</s2>
<s3>IRN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Damghan</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0328129</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0328129 INIST</idno>
<idno type="RBID">Pascal:13-0328129</idno>
<idno type="wicri:Area/Main/Corpus">000649</idno>
<idno type="wicri:Area/Main/Repository">000860</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0957-4522</idno>
<title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title>
<title level="j" type="main">Journal of materials science. Materials in electronics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficient</term>
<term>Additive</term>
<term>Crystallinity</term>
<term>Darkness</term>
<term>Doped materials</term>
<term>Electric resistivity</term>
<term>Electrical conductivity</term>
<term>Glass</term>
<term>ITO layers</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Measurement sensor</term>
<term>Nanocrystal</term>
<term>Optical characteristic</term>
<term>Optical properties</term>
<term>Photoconducting device</term>
<term>Photosensitivity</term>
<term>Resistor</term>
<term>Spray coating</term>
<term>Spray pyrolysis</term>
<term>Substrat temperature</term>
<term>Sulfur</term>
<term>Thiourea</term>
<term>Time dependence</term>
<term>Tin addition</term>
<term>Transmittance</term>
<term>Transparent thin film</term>
<term>Visible spectrum</term>
<term>X ray diffraction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche ITO</term>
<term>Capteur mesure</term>
<term>Dispositif photoconducteur</term>
<term>Addition étain</term>
<term>Dépôt projection</term>
<term>Température substrat</term>
<term>Photosensibilité</term>
<term>Thiourée</term>
<term>Diffraction RX</term>
<term>Cristallinité</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
<term>Coefficient absorption</term>
<term>Facteur transmission</term>
<term>Conductivité électrique</term>
<term>Résistance électrique</term>
<term>Résistivité électrique</term>
<term>Dépendance du temps</term>
<term>Obscurité</term>
<term>Eclairement</term>
<term>Spectre visible</term>
<term>Nanocristal</term>
<term>Couche mince transparente</term>
<term>Oxyde d'indium</term>
<term>Verre</term>
<term>Soufre</term>
<term>Additif</term>
<term>Matériau dopé</term>
<term>0707D</term>
<term>8105K</term>
<term>7867</term>
<term>7363</term>
<term>ITO</term>
<term>7840R</term>
<term>Pyrolyse par projection</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term>
<term>Soufre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH<sub>2</sub>
)<sub>2</sub>
 was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn<sub>2</sub>
S<sub>3</sub>
 appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300-1,000 nm. As a result, ITO and ITO-Sn<sub>2</sub>
S<sub>3</sub>
 thin films were prepared with resistivity of 3.06-3.7 × 10<sup>-4</sup>
 Ω cm and a transmittance of 88-91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn<sub>2</sub>
S<sub>3</sub>
 films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn<sub>2</sub>
S<sub>3</sub>
 film with [S]/ [In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4522</s0>
</fA01>
<fA03 i2="1"><s0>J. mater. sci., Mater. electron.</s0>
</fA03>
<fA05><s2>24</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Nanocrystalline ITO-Sn<sub>2</sub>
S<sub>3</sub>
 transparent thin films for photoconductive sensor applications</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MOTEVALIZADEH (L.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KHORSHIDIFAR (M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>EBRAHIMIZADEH ABRISHAMI (M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BAGHERI MOHAGHEGHI (M. M.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Mashhad Branch, Islamic Azad University</s1>
<s2>Mashhad</s2>
<s3>IRN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Materials and Electroceramics Laboratory, Department of Physics, Ferdowsi University of Mashhad</s1>
<s2>Mashhad</s2>
<s3>IRN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics, Damghan University</s1>
<s2>Damghan</s2>
<s3>IRN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>3694-3700</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22352</s2>
<s5>354000501576440120</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>42 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0328129</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH<sub>2</sub>
)<sub>2</sub>
 was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn<sub>2</sub>
S<sub>3</sub>
 appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300-1,000 nm. As a result, ITO and ITO-Sn<sub>2</sub>
S<sub>3</sub>
 thin films were prepared with resistivity of 3.06-3.7 × 10<sup>-4</sup>
 Ω cm and a transmittance of 88-91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn<sub>2</sub>
S<sub>3</sub>
 films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn<sub>2</sub>
S<sub>3</sub>
 film with [S]/ [In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03C</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D11C06</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15R</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>240</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Capteur mesure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Measurement sensor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="GER"><s0>Messwertaufnehmer</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Captador medida</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dispositif photoconducteur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Photoconducting device</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo fotoconductor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="GER"><s0>Zinnzusatz</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Dépôt projection</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Spray coating</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="GER"><s0>Spritzbeschichten</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Depósito proyección</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Température substrat</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Substrat temperature</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Temperatura substrato</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Photosensibilité</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Photosensitivity</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Fotosensibilidad</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Thiourée</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Thiourea</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Tiourea</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="GER"><s0>Roentgenbeugung</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cristallinité</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Crystallinity</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Cristalinidad</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Optical characteristic</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Característica óptica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Propriété optique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Optical properties</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="GER"><s0>Optische Eigenschaft</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Propiedad óptica</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Coefficient absorption</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Absorption coefficient</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Coeficiente absorción</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="GER"><s0>Transmission faktor</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Conductivité électrique</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Electrical conductivity</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="GER"><s0>Elektrische Leitfaehigkeit</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Conductividad eléctrica</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Résistance électrique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Resistor</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Resistencia eléctrica(componente)</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Résistivité électrique</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Electric resistivity</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Resistividad eléctrica</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Dépendance du temps</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Time dependence</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Dependencia del tiempo</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Obscurité</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Darkness</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Oscuridad</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Eclairement</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Illumination</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Spectre visible</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Visible spectrum</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Espectro visible</s0>
<s5>21</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Couche mince transparente</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Transparent thin film</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Película transparente</s0>
<s5>23</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="GER"><s0>Indiumoxid</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>24</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Verre</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Glass</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="GER"><s0>Glas</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>25</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Soufre</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="ENG"><s0>Sulfur</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="GER"><s0>Schwefel</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Azufre</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>26</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>Additif</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="ENG"><s0>Additive</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="GER"><s0>Zusatzstoff</s0>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="SPA"><s0>Aditivo</s0>
<s5>27</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03>
<fC03 i1="28" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>0707D</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>8105K</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>7363</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE"><s0>7840R</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE"><s0>Pyrolyse par projection</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="35" i2="X" l="ENG"><s0>Spray pyrolysis</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>308</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000860 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000860 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0328129
   |texte=   Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri